Intel DT28F160S5-70: A High-Performance 1M x16 CMOS Flash Memory Solution

The Intel DT28F160S5-70 is a 16-megabit (1M x16) CMOS flash memory chip engineered for high-performance, non-volatile storage applications. Fabricated on Intel's advanced ETOX™ II (EPROM Tunnel Oxide) process technology, this device combines high speed, low power consumption, and reliable data retention, making it a suitable choice for a wide range of computing, telecommunications, and embedded systems.

Operating from a single 5V ±10% power supply, the DT28F160S5-70 offers a fast 70ns maximum access time, enabling efficient support for high-speed microprocessors without the need for wait states. The chip's organization as a 1,048,576-word by 16-bit array provides a straightforward interface for 16-bit data buses, simplifying system design.

A key feature of this memory is its command-driven architecture, which allows in-system reprogrammability without requiring high-voltage inputs to the control pins. This architecture enables a user-friendly system interface for writing and erasing operations. The chip supports full chip erase or a flexible block-erase architecture, where the memory array is divided into multiple 16-Kword blocks. This permits individual blocks to be erased and reprogrammed while others remain active, crucial for storing application code, configuration data, and parameters that require independent updates.

The device ensures high reliability with a minimum 100,000 write/erase cycles per block and superior data retention of up to 10 years. It incorporates several hardware and software data protection features, including a programming lockout during power transitions and a command register lock to prevent accidental writes.

Packaged in a standard 48-pin TSOP, the DT28F160S5-70 is designed for space-constrained applications. Its CMOS technology ensures low power consumption, with a typical active current of 30 mA and a standby current of just 100 µA.

ICGOODFIND: The Intel DT28F160S5-70 is a robust and versatile 16Mb flash memory solution, distinguished by its 70ns access speed, flexible block-erase capability, and exceptional endurance. Its command-based interface and comprehensive protection mechanisms make it an ideal component for demanding embedded systems requiring reliable, non-volatile storage.

Keywords: Non-volatile Memory, Block-Erase Architecture, 70ns Access Time, ETOX™ Process, Command Interface.