Infineon IPD95R1K2P7: High-Performance 950V CoolMOS™ P7 Power Transistor for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics demands semiconductor components that push the boundaries of performance. The Infineon IPD95R1K2P7 stands at the forefront of this innovation, a 950V superjunction MOSFET from the renowned CoolMOS™ P7 family engineered to set new benchmarks in efficient power conversion.

This high-voltage power transistor is specifically designed for demanding switching applications where reliability and efficiency are paramount. Its core strength lies in its exceptionally low effective dynamic drain-source resistance (R DS(eon)) , which is a critical factor in minimizing conduction losses. When combined with outstanding switching characteristics, the device ensures that both switching and conduction losses are kept to an absolute minimum. This translates directly into cooler operation, higher system efficiency, and the potential for more compact designs due to reduced cooling requirements.

A key feature of the CoolMOS™ P7 technology is its superjunction (SJ) principle, which allows for a much better trade-off between on-state resistance and breakdown voltage compared to traditional planar MOSFETs. The IPD95R1K2P7 leverages this to achieve a remarkably low gate charge (Q G) and a small figure of merit (FOM), making it exceptionally fast and efficient at switching.

The robustness of the IPD95R1K2P7 is further enhanced by its integrated fast body diode, which provides excellent reverse recovery performance. This is crucial for applications like power factor correction (PFC) or motor drive circuits, where the body diode's behavior directly impacts overall efficiency and electromagnetic interference (EMI). The high avalanche ruggedness ensures reliable operation even under extreme stress conditions, a vital attribute for industrial environments.

Target applications for this powerful transistor include:

Switched-Mode Power Supplies (SMPS), particularly server and telecom power units.

Power Factor Correction (PFC) stages in high-end industrial systems.

Lighting solutions, including electronic ballasts and LED drivers.

Solar inverters and other renewable energy systems.

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In summary, the Infineon IPD95R1K2P7 is not just a component but a strategic enabler for next-generation power designs. It embodies a perfect synergy of high voltage capability, minimal switching losses, and superior diode ruggedness, making it an ideal choice for engineers aiming to maximize performance and reliability in their high-efficiency switching applications.

Keywords: CoolMOS™ P7, Superjunction MOSFET, High-Efficiency Switching, Low R DS(eon), 950V Rated.