Infineon IPB80N04S4-04: High-Performance OptiMOS Power MOSFET for Efficient Power Conversion
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Meeting this challenge head-on, the Infineon IPB80N04S4-04 stands out as a benchmark in power MOSFET technology. As part of Infineon's esteemed OptiMOS™ family, this device is engineered to deliver exceptional performance in a wide array of power conversion applications, from advanced computing and telecom systems to automotive subsystems and industrial motor drives.
At its core, the IPB80N04S4-04 is designed to minimize energy loss. Constructed with an advanced silicon technology, it boasts an extremely low typical on-state resistance (R DS(on)) of just 1.8 mΩ at 10 V. This ultra-low resistance is pivotal in reducing conduction losses, which directly translates to higher efficiency, less heat generation, and the potential for cooler-running, more compact designs. Whether deployed in a synchronous rectification stage of a switch-mode power supply (SMPS) or as the main switch in a DC-DC converter, this characteristic ensures more power is delivered to the load and wasted as heat.
Beyond its stellar static performance, the device excels in dynamic operation. It features superior switching characteristics thanks to its low gate charge (Q G) and optimized internal capacitances. This enables faster switching speeds, which is crucial for high-frequency operation. By minimizing switching losses, a major contributor to total power loss at elevated frequencies, the IPB80N04S4-04 allows designers to push the boundaries of frequency to achieve higher power density by using smaller passive components like inductors and capacitors.
Housed in a robust and space-saving TO-263 (D2PAK) package, this MOSFET offers an excellent balance between thermal performance and board space occupancy. The package is designed for effective heat dissipation, supporting high current handling capabilities—up to 80 A—making it suitable for demanding high-current applications. Furthermore, its avalanche ruggedness ensures enhanced reliability and robustness against unexpected voltage spikes and harsh operating conditions, providing designers with a greater margin of safety.
The combination of low R DS(on), fast switching speed, and high reliability makes the IPB80N04S4-04 an ideal choice for optimizing the performance of modern power systems, directly contributing to energy savings and more sustainable electronic products.
ICGOOODFIND: The Infineon IPB80N04S4-04 OptiMOS™ power MOSFET is a top-tier solution for engineers focused on maximizing efficiency and power density. Its industry-leading low on-resistance, excellent switching performance, and robust package make it an outstanding component for high-efficiency power conversion stages in server, automotive, and industrial applications.
Keywords: Power Efficiency, Low RDS(on), OptiMOS Technology, Fast Switching, High Current Capability.
