Infineon IPD65R190C7 190 mΩ StrongIRFET™ Power MOSFET for High-Efficiency Automotive and Industrial Applications

The relentless drive for higher efficiency and greater power density in automotive and industrial systems demands power switches that deliver minimal losses and robust performance. Addressing this need, the Infineon IPD65R190C7 Power MOSFET stands out as a premier solution, engineered to excel in the most demanding environments.

This device is a key member of Infineon's StrongIRFET™ family, which is renowned for its optimized balance between low on-state resistance (RDS(on)) and superior switching performance. With an ultra-low 190 mΩ maximum RDS(on) at 10 V, this MOSFET significantly reduces conduction losses, a critical factor for improving overall system efficiency. This is particularly vital in applications like DC-DC converters in 48 V mild-hybrid vehicles, electric power steering (EPS), and industrial motor drives, where every watt saved translates into enhanced performance and thermal management.

The IPD65R190C7 is housed in a TOLL (TO-Leadless) package, which offers a compact footprint and a low profile. This package is not only space-efficient but also features excellent thermal characteristics due to its exposed top and bottom cooling surfaces. This allows for effective dual-side cooling, enabling designers to manage higher power levels in confined spaces and push the boundaries of power density.

Beyond raw performance, this MOSFET is designed for reliability. It offers exceptional avalanche ruggedness and a high maximum junction temperature of 175°C, ensuring stable operation under stressful conditions such as load dumps and cold-crank scenarios in automotive systems. Its AEC-Q101 qualification makes it a trusted component for automotive applications, guaranteeing it meets the stringent quality and reliability standards required by the industry.

ICGOO FIND: The Infineon IPD65R190C7 is a high-performance StrongIRFET™ that sets a new benchmark for efficiency and power density in modern 48 V automotive and industrial systems. Its combination of ultra-low RDS(on), advanced TOLL packaging, and automotive-grade robustness makes it an ideal choice for designers aiming to create the next generation of efficient and compact power electronics.

Keywords: Power MOSFET, StrongIRFET™, High Efficiency, Automotive Grade, TOLL Package.